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NCP1129BP100G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1129BP100G Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 18 page NCP1124, NCP1126, NCP1129 www.onsemi.com 4 Table 4. MAXIMUM RATINGS (Note 5) Rating Symbol Value Unit Drain Input Voltage (Referenced to Source Terminal) NCP112x VDrain −0.3 to 650 V Drain Maximum Pulsed Current NCP1129 (10 ms Single Pulse, TJ = 25°C) NCP1126 NCP1124 IDM 27 11 7 A Single Pulse Avalanche Energy NCP1126, NCP1129 NCP1124 EAS 96 60 mJ Supply Input Voltage VCC(MAX) −0.3 to 35 V Current Sense Input Voltage VCS −0.3 to 10 V Feedback Input Voltage VFB −0.3 to 10 V Operating Junction Temperature TJ −40 to 150 _C Storage Temperature Range TSTG –60 to 150 _C Power Dissipation (TA = 25_C, 2 Oz Cu, 600 mm2 Printed Circuit Copper Clad) PD 1.5 W Thermal Resistance, Junction to Ambient 2 Oz Cu Printed Circuit Copper Clad Low Conductivity (Note 6) High Conductivity (Note 7) RθJA 128 78 _C/W ESD Capability (Note 8) Human Body Model ESD Capability per JEDEC JESD22−A114F. Machine Model ESD Capability per JEDEC JESD22−A115C. Charged−Device Model ESD Capability per JEDEC JESD22−C101E. 2000 200 500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 5. This device contains Latch−Up protection and exceeds ±100 mA per JEDEC Standard JESD78. 6. Low Conductivity Board. As mounted on 40 x 40 x 1.5 mm FR4 substrate with a single layer of 50 mm2 of 2 oz copper trances and heat spreading area. As specified for a JEDEC 51 low conductivity test PCB. Test conditions were under natural convection of zero air flow. 7. High Conductivity Board. As mounted on 40 x 40 x 1.5 mm FR4 substrate with a single layer of 600 mm2 of 2 oz copper trances and heat spreading area. As specified for a JEDEC 51 high conductivity test PCB. Test conditions were under natural convection of zero air flow. 8. The Drain pins (5 and 6), are rated to the maximum voltage of the device, or 650 V. |
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