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NGTB15N120IHWG Datasheet(PDF) 1 Page - ON Semiconductor

Part # NGTB15N120IHWG
Description  IGBT
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGTB15N120IHWG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. P0
1
Publication Order Number:
NGTB15N120IHW/D
NGTB15N120IHWG
Product Preview
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
Extremely Efficient Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Losses in IH Cooker Application
This is a Pb−Free Device
Typical Applications
Inductive Heating
Consumer Appliances
Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
VCES
1200
V
Collector current
@ TC = 25
°C
@ TC = 100
°C
IC
30
15
A
Pulsed collector current, Tpulse limited
by TJmax, 10 ms Pulse, VGE = 15 V
ICM
60
A
Diode forward current
@ TC = 25
°C
@ TC = 100
°C
IF
30
15
A
Diode pulsed current, Tpulse limited
by TJmax
IFM
60
A
Gate−emitter voltage
Transient Gate−emitter voltage
(Tpulse = 5 ms, D < 0.10)
VGE
$20
$25
V
Power Dissipation
@ TC = 25
°C
@ TC = 100
°C
PD
278
139
W
Operating junction temperature range
TJ
−40 to +175
°C
Storage temperature range
Tstg
−55 to +175
°C
Lead temperature for soldering, 1/8
from case for 5 seconds
TSLD
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
TO−247
CASE 340AL
15 A, 1200 V
VCEsat = 2.10 V
Eoff = 0.36 mJ
Device
Package
Shipping
ORDERING INFORMATION
NGTB15N120IHWG
TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MARKING DIAGRAM
G
E
C
15N120IH
AYWWG


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