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NGTB15N120IHWG Datasheet(PDF) 1 Page - ON Semiconductor |
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NGTB15N120IHWG Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 9 page © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. P0 1 Publication Order Number: NGTB15N120IHW/D NGTB15N120IHWG Product Preview IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Features • Extremely Efficient Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Losses in IH Cooker Application • This is a Pb−Free Device Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage VCES 1200 V Collector current @ TC = 25 °C @ TC = 100 °C IC 30 15 A Pulsed collector current, Tpulse limited by TJmax, 10 ms Pulse, VGE = 15 V ICM 60 A Diode forward current @ TC = 25 °C @ TC = 100 °C IF 30 15 A Diode pulsed current, Tpulse limited by TJmax IFM 60 A Gate−emitter voltage Transient Gate−emitter voltage (Tpulse = 5 ms, D < 0.10) VGE $20 $25 V Power Dissipation @ TC = 25 °C @ TC = 100 °C PD 278 139 W Operating junction temperature range TJ −40 to +175 °C Storage temperature range Tstg −55 to +175 °C Lead temperature for soldering, 1/8 ″ from case for 5 seconds TSLD 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. TO−247 CASE 340AL 15 A, 1200 V VCEsat = 2.10 V Eoff = 0.36 mJ Device Package Shipping ORDERING INFORMATION NGTB15N120IHWG TO−247 (Pb−Free) 30 Units / Rail http://onsemi.com A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM G E C 15N120IH AYWWG |
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