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NGTB25N120FL2WG Datasheet(PDF) 4 Page - ON Semiconductor |
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NGTB25N120FL2WG Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 10 page NGTB25N120FL2WG www.onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Diode Forward Characteristics VF, FORWARD VOLTAGE (V) 3.0 2.5 2.0 1.5 1.0 0.5 0 40 TJ = 25°C TJ = 150°C 35 30 25 15 10 5 0 Figure 8. Typical Gate Charge QG, GATE CHARGE (nC) 100 50 0 0 2 4 6 8 12 14 16 150 10 VCE = 600 V VGE = 25 V IC = 25 A Figure 9. Switching Loss vs. Temperature TJ, JUNCTION TEMPERATURE (°C) 140 120 100 80 60 40 20 0 160 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W Eoff Figure 10. Switching Time vs. Temperature TJ, JUNCTION TEMPERATURE (°C) 140 120 100 80 60 40 20 0 1000 160 VCE = 600 V VGE = 15 V IC = 25 A Rg = 10 W Figure 11. Switching Loss vs. IC IC, COLLECTOR CURRENT (A) 20 10 0 5 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W Eoff Figure 12. Switching Time vs. IC IC, COLLECTOR CURRENT (A) 1000 VCE = 600 V VGE = 15 V TJ = 150°C Rg = 10 W 3.5 tf td(off) 10 tf td(off) 30 10 020 30 50 10 3.0 2.0 1.0 0.5 0 40 60 4 3 2 1 0 40 60 20 200 1.5 2.5 Eon 100 td(on) tr Eon 50 100 td(on) tr |
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