© Semiconductor Components Industries, LLC, 2014

May, 2014 − Rev. 0

1

Publication Order Number:

NGTG15N120FL2W/D

NGTG15N120FL2WG

IGBT - Field Stop II

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Field Stop II Trench construction, and provides superior

performance in demanding switching applications, offering both low

on state voltage and minimal switching loss. The IGBT is well suited

for UPS and solar applications.

Features

Typical Applications

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

1200

V

Collector current

°C

°C

30

15

A

60

A

Gate−emitter voltage

Transient gate−emitter voltage

$20

±30

V

Power Dissipation

°C

°C

294

147

W

Short Circuit Withstand Time

10

ms

Operating junction temperature

range

−55 to +175

°C

Storage temperature range

−55 to +175

°C

Lead temperature for soldering, 1/8”

from case for 5 seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO−247

CASE 340AL

C

G

15 A, 1200 V

E

Device

Package

Shipping

ORDERING INFORMATION

NGTG15N120FL2WG

TO−247

(Pb−Free)

30 Units / Rail

http://onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

G15N120FL2

AYWWG

G

E

C