SSFD4004

40V N-Channel MOSFET

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Rev.1.0

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

580

A

153

W

Linear Derating Factor

1.02

W/°C

Drain-Source Voltage

40

V

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy @ L=0.1mH

281.3

mJ

Avalanche Current @ L=0.1mH

75

A

Operating Junction and Storage Temperature Range

-55 to + 175

°C

40V

3.2mohm(typ.)

145A

TO-252

Marking and Pin

Assignment

Schematic Diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



175℃ operating temperature



Lead free product

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the

on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely

efficient and reliable device for use in power switching application and a wide variety of other applications.