NCP1361 datasheet(7/26 Pages) ONSEMI

Part #	NCP1361

Description	Low Power Offline Constant Current PWM Current-Mode Controller

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Manufacturer	ONSEMI [ON Semiconductor]

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NCP1361, NCP1366

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7

ELECTRICAL CHARACTERISTICS: (VCC = 12 V, CDRV = 1 nF, For typical values TJ = 25°C, for min/max values TJ = −40°C to

+125

°C, Max TJ = 150°C, unless otherwise noted)

Characteristics

Unit

Max

Typ

Min

Symbol

Conditions

DEMAGNETIZATION INPUT − ZERO VOLTAGE DETECTION CIRCUIT and VOLTAGE SENSE

Delay after on−time that the

Vs/ZCD is still pulled to ground

(Note 4)

tshort_ZCD

−

0.7

−

ms

Blanking delay after on−time

(Vs/ZCD pin is disconnected

from the internal circuitry)

tblank_ZCD

1.2

1.5

1.8

ms

Timeout after last

demagnetization transition

Timeout while in Soft−start

Timeout after soft−start complete

toutSS

tout

36

4.5

44

5.5

52

6.5

ms

Input leakage current

VCC > VCC(on) VZCD = 4 V, DRV is low

IZCD

−

0.1

mA

DRIVE OUTPUT − GATE DRIVE

Drive resistance

DRV Sink

DRV Source

RSNK

RSRC

−

7

12

−

W

Rise time

CDRV = 1 nF, from 10% to 90%

tr

−

45

80

ns

Fall time

CDRV = 1 nF, from 90% to 10%

tf

−

30

60

ns

DRV Low voltage

VCC = VCC(off) + 0.2 V,

CDRV = 220 pF, RDRV = 33 kW

VDRV(low)

6.0

−

V

DRV High voltage

VCC = VCC(OVP)−0.2 V, CDRV = 220 pF,

RDRV = 33 kW

VDRV(high)

−

13.0

V

SOFT START

Internal Fixed Soft Start

Duration

Current Sense peak current rising from

0.2 V to 0.8 V

tSS

3

4

5

ms

FAULT PROTECTION

Thermal Shutdown

Device switching (Fsw ∼ 65 kHz)

(Note 4)

TSHTDN

−

150

−

°C

Thermal Shutdown Hysteresis

Device switching (Fsw ∼ 65 kHz)

(Note 4)

TSHTDN(HYS)

−

40

−

°C

Number of Drive cycle before

latch confirmation

VComp = VComp(max),

VCS > VCS(stop)

Or Internal sampled Vout > VOVP

Tlatch_count

−

4

−

Fault level detection for OVP

Ù

Latched or Double Hiccup

autorecovery (depends on fault

version)

Internal sampled Vout increasing

VOVP = Vref_CV2+26%

Version E

VOVP

2.95

3.4

3.15

3.6

3.35

3.8

V

Fault level detection for UVP

Ù

Double Hiccup autorecovery

(UVP detection is disabled

during TEN_UVP)

Internal sampled Vout decreasing

Version A & B

Version C with a 300 mV CBC

Version E

VUVP

1.4

1.516

0.70

1.5

1.625

0.75

1.6

1.733

0.80

V

Blanking time for UVP

detection

Starting at the beginning of the Soft

start

TEN_UVP

−

37

−

ms

Pull−up Current Source on CS

pin for Open or Short circuit

detection

When VCS > VCS_min

ICS

−

55

−

mA

CS pin Open detection

CS pin open

VCS(open)

0.8

−

V

CS pin Short detection

VCS_min

−

50

70

mV

CS pin Short detection timer

(Note 4)

TCS_short

−

3

−

ms

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. The timer can be reset if there are 4 DRV cycles without overload or short circuit conditions

4. Guaranteed by Design.

* Characterization upon request

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NCP1361 Datasheet(PDF) 7 Page - ON Semiconductor

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