PBSS4140U_15 datasheet(3/8 Pages) PHILIPS

Part #	PBSS4140U

Description	40 V low VCEsat NPN transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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3 / 8 page

2001 Jul 13

3

NXP Semiconductors

Product data sheet

40 V low VCEsat NPN transistor

PBSS4140U

THERMAL CHARACTERISTICS

Notes

1.

Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.

2.

Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

Note

1.

Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to

ambient

in free air; note 1

500

K/W

in free air; note 2

357

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off

current

VCB = 40 V; IC = 0

−

100

nA

VCB = 40 V; IC = 0; Tamb = 150 °C

−

50

μA

ICEO

collector-emitter cut-off

current

VCE = 30 V; IB = 0

−

100

nA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

100

nA

hFE

DC current gain

VCE = 5 V; IC = 1 mA

300

−

VCE = 5 V; IC = 500 mA

300

−

900

VCE = 5 V; IC = 1 A

200

−

VCEsat

collector-emitter saturation

voltage

IC = 100 mA; IB = 1 mA

−

200

mV

IC = 500 mA; IB = 50 mA

−

250

mV

IC = 1 A; IB = 100 mA

−

500

mV

RCEsat

equivalent on-resistance

IC = 500 mA; IB = 50 mA; note 1

−

260

<500

m

Ω

VBEsat

base-emitter saturation

voltage

IC = 1 A; IB = 100 mA

−

1.2

V

VBEon

base-emitter turn-on voltage VCE = 5 V; IC = 1 A

−

1.1

V

fT

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz

150

−

MHz

Cc

collector capacitance

VCB = 10 V; IE = Ie = 0; f = 1 MHz

−

10

pF

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