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3LN01C-TB-E Datasheet(PDF) 2 Page - ON Semiconductor

Part # 3LN01C-TB-E
Description  N-Channel Small Signal MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

3LN01C-TB-E Datasheet(HTML) 2 Page - ON Semiconductor

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3LN01C
No.6260-2/6
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
μA
Gate to Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100μA
0.4
1.3
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=80mA
0.15
0.22
S
Static Drain to Source On-State Resistance
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Ω
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
Ω
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Ω
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
5.9
pF
Reverse Transfer Capacitance
Crss
2.3
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
65
ns
Turn-OFF Delay Time
td(off)
155
ns
Fall Time
tf
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate to Source Charge
Qgs
0.26
nC
Gate to Drain “Miller” Charge
Qgd
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
4V
0V
VIN
P.G
50Ω
G
S
D
ID=80mA
RL=187.5Ω
VDD=15V
VOUT
3LN01C
VIN


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