VT10200C-M3

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Vishay General Semiconductor

Revision: 24-May-13

1

Document Number: 87997

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material

categorization:

For

definitions

of

TYPICAL APPLICATIONS

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

MECHANICAL DATA

Case: TO-220AB



Molding compound meets UL 94 V-0 flammability rating



Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

 40 ms

PRIMARY CHARACTERISTICS

Package

TO-220AB

2 x 5.0 A

200 V

80 A

0.65 V

150 °C

Diode variations

Common cathode

1

2

3

PIN 1

PIN 2

CASE

PIN 3

TO-220AB

VT10200C

TMBS

®

PARAMETER

SYMBOL

VT10200C

UNIT

Maximum repetitive peak reverse voltage

200

V

Maximum average forward rectified current (fig. 1)

per device

10.0

A

per diode

5.0

Peak forward surge current 8.3 ms single half sine-wave superimposed

on rated load per diode

80

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 40 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Breakdown voltage

200 (minimum)

-

V

Instantaneous forward voltage per diode

0.81

-

V

1.10

1.60

0.58

-

0.65

0.73

Reverse current per diode

1.7

-

μA

1.8

-

mA

-

150

μA

2.5

10

mA