60414HK TC-00003127/71112TKIM/41112TKIM PA No.9051-1/6

http://onsemi.com

Semiconductor Components Industries, LLC, 2014

June, 2014

SFT1452

N-Channel Power MOSFET

250V, 3A, 2.4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Features

•

ON-resistance RDS(on)=1.8Ω(typ.)

•

Input Capacitance Ciss=210pF(typ.)

•

10V drive

•

Halogen free compliance

•

ESD Diode-Protected Gate

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

250

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

3

A

Drain Current (Pulse)

IDP

PW

≤10μs, duty cycle≤1%

12

A

Power Dissipation

PD

1

W

Tc=25

°C

26

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Case Steady State

RθJC

4.81

°C/W

Junction to Ambient *1

RθJA

125

Note :

*1 Insertion mounted

7518-004

7003-004

6.5

5.0

2.3

0.5

12

4

3

0.85

0.7

1.2

0.6

0.5

2.32.3

1 : Gate

2 : Drain

3 : Source

4 : Drain

IPAK(TP)

6.5

5.0

2.3

0.5

12

4

3

0.85

0.6

0.5

1.2

2.32.3

0 to 0.2

1 : Gate

2 : Drain

3 : Source

4 : Drain

DPAK(TP-FA)

SFT1452-H

SFT1452-W

SFT1452-TL-H

SFT1452-TL-W

Ordering number : EN9051B

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.