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NCE0106Z Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE0106Z Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE0106Z Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0106Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply D G S Schematic diagram TO-92 view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 0106Z NCE0106Z TO-92 - - - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 6 A Drain Current-Pulsed (Note 1) IDM 24 A Maximum Power Dissipation PD 3 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 41.7 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 100 110 - V Zero Gate Voltage Drain Current IDSS VDS=100V,VGS=0V - - 1 μA |
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