SM74101

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SNOSBA2B – JULY 2011 – REVISED MAY 2015

Electrical Characteristics (continued)

specified.

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Low Threshold

0.8

1.35

2.0

V

HYS

Input Hysteresis

400

mV

Input Current Low

IN = INB = 0V

-1

0.1

1

µA

Input Current High

-1

0.1

1

µA

OUTPUT DRIVER

Output Resistance High

(1)

30

50

Ω

Output Resistance Low

(1)

1.4

2.5

Ω

Peak Source Current

3

A

Peak Sink Current

7

A

LATCHUP PROTECTION

AEC–Q100, METHOD 004

500

mA

(1)

The output resistance specification applies to the MOS device only. The total output current capability is the sum of the MOS and

Bipolar devices.

6.6 Switching Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Propagation Delay Time Low to

td1

High,

25

40

ns

IN/ INB rising ( IN to OUT)

Propagation Delay Time High to

td2

Low,

25

40

ns

IN / INB falling (IN to OUT)

tr

Rise time

14

ns

tf

Fall time

12

ns

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