This is preliminary information on a new product in development now .

Details are subject to change without notice .

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

Parameter

Symbol

N-Channel

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Maximum Power Dissipation

30

2.0

27

6.8

V

W

A

A

V

1

SO-8

1

P-Channel

-30

-19

-4.8

CEM8958A

http://www.cetsemi.com

5

Rev 1.

2006.Aug

High power and current handing capability.

Surface mount Package.

Lead free product is acquired.

PRELIMINARY

1

2

3

4

8

7

6

5

Operating and Store Temperature Range

-55 to 150

C

Thermal Characteristics

Parameter

Symbol

Limit

Units

C/W

62.5

R

θJA