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K9F6408U0M-TCB0 Datasheet(PDF) 9 Page - Samsung semiconductor |
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K9F6408U0M-TCB0 Datasheet(HTML) 9 Page - Samsung semiconductor |
9 / 26 page K9F6408U0M-TCB0, K9F6408U0M-TIB0 FLASH MEMORY 9 Identifying Invalid Block(s) Invalid Block(s) Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. Typically, an invalid block will contain a single bad bit. The information regarding the invalid block(s) is called as the invalid block information. The invalid block information is written to the 1st or the 2nd page of the invalid block(s) with 00h data. Devices with invalid block(s) have the same quality level or as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select tran- sistor. The system design must be able to mask out the invalid block(s) via address mapping. The 1st block of the NAND Flash, how- ever, is fully guaranteed to be a valid block. NAND Flash Technical Notes All device locations are erased(FFh) except locations where the invalid block information is written prior to shipping. Since the invalid block information is also erasable in most cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original invalid block information and create the invalid block table via the following suggested flow chart(Figure 1). Any intentional era- sure of the original invalid block information is prohibited. * Check "FFH" on the 1st and 2nd page Figure 1. Flow chart to create invalid block table. Start Set Block Address = 0 Check "FFH" ? Increment Block Address Last Block ? End No Yes Yes Create (or update) No Invalid Block(s) Table |
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