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NCE0208IA Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE0208IA Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
2 / 7 page Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 2 NCE0208IA Pb Free Product http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 2.3 /W ℃ Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 215 - V Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.7 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4.5A - 260 300 mΩ Forward Transconductance gFS VDS=25V,ID=4.5A 3 - - S Dynamic Characteristics (Note4) Input Capacitance Clss 540 PF Output Capacitance Coss 90 PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz 35 PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 6.4 - nS Turn-on Rise Time tr - 11 - nS Turn-Off Delay Time td(off) - 20 - nS Turn-Off Fall Time tf VDD=100V,ID=4.5A VGS=10V,RGEN=5Ω - 12 - nS Total Gate Charge Qg - 16 - nC Gate-Source Charge Qgs - 3.4 - nC Gate-Drain Charge Qgd VDS=160V,ID=4.5A, VGS=10V - 5.1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=4.5A - - 1.2 V Diode Forward Current (Note 2) IS - - 8 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production |
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