BTPA92T3 datasheet(2/7 Pages) CYSTEKEC

Part #	BTPA92T3

Description	Low Vcesat PNP Epitaxial Planar Transistor

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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CYStech Electronics Corp.

Spec. No. : C308T3

Issued Date : 2015.09.21

Revised Date :

Page No. : 2/7

BTPA92T3

CYStek Product Specification

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

-300

V

Collector-Emitter Voltage

VCEO

-300

V

Emitter-Base Voltage

VEBO

-7

V

IC(DC)

-300

mA

Collector Current

IC(pulse)

-500

*1

mA

Pd(Ta=25℃)

1.2

Power Dissipation

Pd(Tc=25℃)

10

W

Operating Junction Temperature Range

Tj

-55~+150

°C

Storage Temperature Range

Tstg

-55~+150

°C

Note : *1. Single Pulse Pw

≤300μs, Duty≤2%

.

Characteristics (Ta=25°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-300

-

V

IC=-100μA, IE=0

BVCEO

-300

-

V

IC=-1mA, IB=0

BVEBO

-7

-

V

IE=-100μA, IC=0

ICBO

-

-100

nA

VCB=-300V

IEBO

-

-100

nA

VEB=-7V

*VCE(sat)

-

-0.09

-0.2

V

IC=-20mA, IB=-2mA

*VCE(sat)

-

-0.13

-0.3

V

IC=-50mA, IB=-5mA

*VCE(sat)

-

-0.19

-0.5

V

IC=-100mA, IB=-10mA

*VBE(sat)

-

-0.73

-1

V

IC=-20mA, IB=-2mA

*hFE1

120

-

270

-

VCE=-10V, IC=-10mA

*hFE2

60

-

VCE=-10V, IC=-100mA

fT

-

73

-

MHz

VCE=-20V, IC=-50mA, f=100MHz

Cob

-

7.3

-

pF

VCB=-10V, f=1MHz

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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