DS1847E-050 datasheet(5/17 Pages) DALLAS

Part #	DS1847E-050

Description	Dual Temperature-Controlled NV Variable Resistor

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Manufacturer	DALLAS [Dallas Semiconductor]

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DS1847

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Memory

Location

Name of Location

Function of Location

E2h

Temperature MSB

This byte contains the MSB of the 13-bit 2s

complement temperature output from the

temperature sensor.

E3h

Temperature LSB

This byte contains the LSB of the 13-bit 2s

complement temperature output from the

temperature sensor.

For example temperature readings, refer to Table

2.

E4h

Address Pointer

Calculated, current resistor address (0h – 47h).

The user-defined resistor setting at this location in

the respective look-up table will be loaded into

F0h and F1h to set the two resistors.

E5h to E6h

User Memory

General purpose user memory (SRAM)

E7h

Address Select

Internal or external device address select. This

byte allows the user to use the external address

pins or an internal register location to determine

the device address.

ENB = 0 and external A2, A1, A0 grounded,

device will use internal address bits (A2, A1, A0)

in this register

ENB = 1, external A2, A1, A0 = any setting,

device will use external address pins

Default setting is 01h. The device uses external

pins to determine its address.

E8h to EFh

User Memory

General purpose user memory (SRAM)

F0h

Resistor 0 Setting

In the user-controlled setting mode, this block

contains the resistor 0 setting.

F1h

Resistor 1 Setting

In the user-controlled setting mode, this block

contains the resistor 1 setting.

F2h to FFh

User memory

General purpose user memory (SRAM)

A2 A1 A0 ENB

20 2-1 2-2 2-3 2-4 X X X

S 27 26 25 24 23 22 21

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DS1847E-050 Datasheet(PDF) 5 Page - Dallas Semiconductor

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