40214HK TC-00003102/21214TKIM No.A2291-1/6

Semiconductor Components Industries, LLC, 2014

April, 2014

http://onsemi.com

EFC6611R

Features

 2.5V drive

 Common-drain type

 Protection diode in

 2KV ESD HBM

 Halogen free compliance

Applications

 Lithium-ion battery charging and discharging switch

Specifications

Absolute Maximum Ratings at Ta = 25

C

Parameter

Symbol

Conditions

Value

Unit

Source to Source Voltage

VSSS

12

V

Gate to Source Voltage

VGSS

8V

Source Current (DC)

IS

27

A

Source Current (Pulse)

ISP

PW

100s, duty cycle1%

100

A

Total Dissipation

PT

When mounted on ceramic substrate (5000mm

2.5

W

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

- 55 to +150

C

Thermal Resistance Ratings

Parameter

Symbol

Value

Unit

Junction to Ambient

50

C /W

When mounted on ceramic substrate (5000mm

Electrical Characteristics at Ta

 25C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Source to Source Breakdown Voltage

V(BR)SSS

IS=1mA, VGS=0V

Test Circuit 1

12

V

Zero-Gate Voltage Source Current

ISSS

VSS=10V, VGS=0V

Test Circuit 1

1

A

Gate to Source Leakage Current

IGSS

VGS=±8V, VSS=0V

Test Circuit 2

1

A

Gate Threshold Voltage

VGS(th)

VSS=6V, IS=1mA

Test Circuit 3

0.5

1.3

V

Forward Transconductance

gFS

VSS=6V, IS=3A

Test Circuit 4

19

S

Continued on next page.

Ordering number : ENA2291A

N-Channel Power MOSFET

12V, 27A, 3.2mΩ, Dual EFCP

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of this data sheet.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

EFCP3517-6DGH-020