© Semiconductor Components Industries, LLC, 2013

December, 2013 − Rev. 0

1

Publication Order Number:

NDD60N745U1/D

NDD60N745U1

N-Channel Power MOSFET

600 V, 745 mW

Features

Compliant

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

600

V

Gate−to−Source Voltage

±25

V

Continuous Drain

Steady

State

6.6

A

4.2

Power Dissipation

Steady

State

84

W

Pulsed Drain

Current

27

A

Operating Junction and Storage

Temperature

−55 to

+150

°C

Source Current (Body Diode)

6.6

A

Single Pulse Drain−to−Source Avalanche

EAS

38

mJ

Peak Diode Recovery (Note 1)

dv/dt

15

V/ns

Lead Temperature for Soldering Leads

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDD60N745U1

1.5

°C/W

Junction−to−Ambient Steady State

(Note 3)

NDD60N745U1

(Note 2)

NDD60N745U1−1

(Note 2)

NDD60N745U1−35

47

98

95

°C/W

2. Insertion mounted

3. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127 in sq [2 oz] including traces)

http://onsemi.com

See detailed ordering and shipping information on page 3 of

this data sheet.

ORDERING INFORMATION

600 V

745 mW @ 10 V

N−Channel MOSFET

D (2)

S (3)

G (1)

1

23

4

IPAK

CASE 369D

STYLE 2

DPAK

CASE 369C

STYLE 2

1 2

3

4

IPAK

CASE 369AD

STYLE 2

1 2

3

4