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NDD60N745U1T4G Datasheet(PDF) 1 Page - ON Semiconductor |
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NDD60N745U1T4G Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 0 1 Publication Order Number: NDD60N745U1/D NDD60N745U1 N-Channel Power MOSFET 600 V, 745 mW Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 600 V Gate−to−Source Voltage VGS ±25 V Continuous Drain Current RqJC Steady State TC = 25°C ID 6.6 A TC = 100°C 4.2 Power Dissipation – RqJC Steady State TC = 25°C PD 84 W Pulsed Drain Current tp = 10 ms IDM 27 A Operating Junction and Storage Temperature TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 6.6 A Single Pulse Drain−to−Source Avalanche Energy (ID = 2.5 A) EAS 38 mJ Peak Diode Recovery (Note 1) dv/dt 15 V/ns Lead Temperature for Soldering Leads TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. ISD < 6.6 A, di/dt ≤ 400 A/ms, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS THERMAL RESISTANCE Parameter Symbol Value Unit Junction−to−Case (Drain) NDD60N745U1 RqJC 1.5 °C/W Junction−to−Ambient Steady State (Note 3) NDD60N745U1 (Note 2) NDD60N745U1−1 (Note 2) NDD60N745U1−35 RqJA 47 98 95 °C/W 2. Insertion mounted 3. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces) http://onsemi.com See detailed ordering and shipping information on page 3 of this data sheet. ORDERING INFORMATION V(BR)DSS RDS(ON) MAX 600 V 745 mW @ 10 V N−Channel MOSFET D (2) S (3) G (1) 1 23 4 IPAK CASE 369D STYLE 2 DPAK CASE 369C STYLE 2 1 2 3 4 IPAK CASE 369AD STYLE 2 1 2 3 4 |
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