NVD6495NL datasheet(3/6 Pages) ONSEMI

Part #	NVD6495NL

Description	N-Channel Power MOSFET

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NVD6495NL

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23

45

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

TJ = 25°C

VGS = 10 V

5 V

4 V

3.6 V

3.4 V

3.2 V

3.0 V

2.8 V

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS w 10 V

TJ = 125°C

TJ = −55°C

TJ = 25°C

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Region versus Gate Voltage

0.040

0.042

0.044

0.046

0.048

0.050

5

10

152025

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

VGS = 4.5 V

VGS = 10 V

TJ = 25°C

0.5

1.0

1.5

2.0

2.5

3.0

−50

−25

0

25

50

75

100

125

150

175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

ID = 23 A

VGS = 4.5 V

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

100

1000

10000

10

20

30

40

50

60

70

80

90 100

TJ = 125°C

VGS = 0 V

TJ = 150°C

0

5

10

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30

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40

45

123

4

0.040

0.042

0.044

0.046

0.048

0.050

2345

6789

10

ID = 23 A

TJ = 25°C

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