HO

HS

LO

HB

LM5104

L

(Optional external

fast recovery diode)

IN

PWM

CONTROLLER

GND

OUT1

OUT2

RT

C

LM5104

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SNVS269D – JANUARY 2004 – REVISED DECEMBER 2014

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Application Information

The LM5104 is one of the latest generation of high-voltage gate drivers which are designed to drive both the

high-side and low-side N-channel MOSFETs in a half-bridge/full bridge configuration or in a synchronous buck

circuit. The floating high-side driver can operate with supply voltages up to 100 V. This allows for N-channel

MOSFET control in half-bridge, full-bridge, push-pull, two switch forward and active clamp topologies.

Table 1. Highlights

FEATURE

BENEFIT

Adaptive Rising and Falling Edges with Programmable Additional

Allows optimization of gate drive timings to account for device

Delay

differences between high-side and low-side positions.

Single Input Control

Direct drive from lower cost PWM controllers

Internal Bootstrap Diode

Reduces parts count and PCB real estate

8.2 Typical Application

Figure 15. LM5104 Driving MOSFETs Connected in Synchronous Buck Configuration

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