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LM5110 Datasheet(PDF) 4 Page - Texas Instruments |
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LM5110 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 20 page LM5110 SNVS255A – MAY 2004 – REVISED MAY 2004 www.ti.com Configuration Table Part Number “A” Output Configuration “B” Output Configuration Package LM5110-1M Non-Inverting Non-Inverting SOIC- 8 LM5110-2M Inverting Inverting SOIC- 8 LM5110-3M Inverting Non-Inverting SOIC- 8 LM5110-1SD Non-Inverting Non-Inverting WSON-10 LM5110-2SD Inverting Inverting WSON-10 LM5110-3SD Inverting Non-Inverting WSON-10 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) VCC to VEE −0.3V to 15V VCC to IN_REF −0.3V to 15V IN to IN_REF, nSHDN to IN_REF −0.3V to 15V IN_REF to VEE −0.3V to 5V Storage Temperature Range, TSTG −55°C to +150°C Maximum Junction Temperature, TJ(max) +150°C Operating Junction Temperature +125°C ESD Rating 2kV (1) Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device is intended to be functional. For ensured specifications and test conditions, see the Electrical Characteristics. (2) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and specifications. Electrical Characteristics TJ = −40°C to +125°C, VCC = 12V, VEE = IN_REF = 0V, nSHDN = VCC, No Load on OUT_A or OUT_B, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units VCC Operating Range VCC−IN_REF and VCC−VEE 3.5 14 V VCCR VCC Under Voltage Lockout (rising) VCC−IN_REF 2.3 2.9 3.5 V VCCH VCC Under Voltage Lockout 230 mV Hysteresis ICC VCC Supply Current (ICC) IN_A = IN_B = 0V (5110-1) 1 2 IN_A = IN_B = VCC (5110-2) 1 2 mA IN_A = VCC, IN_B = 0V 1 2 (5110-3) ICCSD VCC Shutdown Current (ICC) nSHDN = 0V 18 25 µA CONTROL INPUTS VIH Logic High 1.75 2.2 V VIL Logic Low 0.8 1.35 V HYS Input Hysteresis 400 mV IIL Input Current Low IN_A=IN_B=VCC (5110-1-2-3) −1 0.1 1 IIH Input Current High IN_A=IN_B=VCC (5110-1) 10 18 25 IN_A=IN_B=VCC (5110-2) −1 0.1 1 µA IN_A=VCC (5110-3) -1 0.1 1 IN_B=VCC (5110-3) 10 18 25 SHUTDOWN INPUT ISD Pull-up Current nSHDN = 0 V −18 −25 µA 4 Submit Documentation Feedback Copyright © 2004, Texas Instruments Incorporated Product Folder Links: LM5110 |
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