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HM5117805TS-7 Datasheet(PDF) 8 Page - Elpida Memory |
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HM5117805TS-7 Datasheet(HTML) 8 Page - Elpida Memory |
8 / 32 page HM5117805 Series Data Sheet E0156H10 8 Read, Write, Read-Modify-Write and Refresh Cycles (Common parameters) HM5117805 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Notes Random read or write cycle time t RC 84 — 104 — 124 — ns RAS precharge time t RP 30 — 40 — 50 — ns CAS precharge time t CP 7—10 — 13 —ns RAS pulse width t RAS 50 10000 60 10000 70 10000 ns CAS pulse width t CAS 7 10000 10 10000 13 10000 ns Row address setup time t ASR 0—0—0—ns Row address hold time t RAH 7—10 — 10 —ns Column address setup time t ASC 0—0—0—ns Column address hold time t CAH 7—10 — 13 —ns RAS to CAS delay time t RCD 11 37 14 45 14 52 ns 3 RAS to column address delay time t RAD 9 2512 3012 35ns 4 RAS hold time t RSH 10 — 13 — 13 — ns CAS hold time t CSH 35 — 40 — 45 — ns CAS to RAS precharge time t CRP 5—5—5—ns OE to Din delay time t OED 13 — 15 — 18 — ns 5 OE delay time from Din t DZO 0—0—0—ns 6 CAS delay time from Din t DZC 0—0—0—ns 6 Transition time (rise and fall) t T 250 2 50 250 ns 7 |
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