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NCE15GD135P Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE15GD135P Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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2 / 8 page  http://www.ncepower.com Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 NCE15GD135P Pb Free Product Thermal Characteristics Symbol Parameter Typ. Max. Units R JC Thermal Resistance, Junction to Case - 0.57 °C/W RJA Thermal Resistance, Junction to Ambient - 40 °C/W Electrical Characteristics of the IGBT T C=25°C Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE=0V, Ic=1mA 1350 - - V ICES Collector Cut-Off Current VCE= VCES, VGE=0V - - 1 mA IGES G-E Leakage Current VGE= VGES, VCE=0V - - +/-250 nA On Characteristics VGE(th) G-E Threshold Voltage IC=15mA, VCE=VGE 4.0 5.5 7.0 V IC=15A, VGE=15V TC=25°C - 2 2.5 V VCE(sat) Collector to Emitter Saturation Voltage IC=15A, VGE=15V TC=125°C - 2.15 - V Dynamic Characteristics Cies Input Capacitance - 2350 - pF Coes Output Capacitance - 70 - pF Cres Reverse Transfer Capacitance VCE=30V, VGE=0V, f=1MHz - 45 - pF Switching Characteristics td(on) Turn-On Delay Time - 33 - ns tr Rise Time - 80 - ns td(off) Turn-Off Delay Time - 160 - ns tf Fall Time - 255 330 ns Eon Turn-On Switching Loss - 0.3 - mJ Eoff Turn-Off Switching Loss - 0.58 0.74 mJ Ets Total Switching Loss VCC=600V,IC=15A, RG=10Ώ,VGE=15V, Resistive Load, TC=25°C - 0.88 - mJ td(on) Turn-On Delay Time - 30 - ns tr Rise Time - 115 - ns td(off) Turn-Off Delay Time - 170 - ns tf Fall Time - 390 - ns Eon Turn-On Switching Loss - 0.38 - mJ Eoff Turn-Off Switching Loss - 0.89 - mJ Ets Total Switching Loss VCC=600V,IC=15A, RG=10Ώ,VGE=15V, Resistive Load, TC=125°C - 1.27 - mJ Qg Total Gate Charge - 100 - nC Qge Gate to Emitter Charge - 19 - nC Qgc Gate to Collector Charge VCC=600V,IC=15A, VGE=15V - 45 - nC |
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