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CPH5802D Datasheet(PDF) 1 Page - ON Semiconductor |
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CPH5802D Datasheet(HTML) 1 Page - ON Semiconductor |
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1 / 5 page  CPH5802 Rev.0 I Page 1 of 5 I www.onsemi.com Features • Composite type with a P-Channel Sillicon MOSFET (MCH3306) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • Ultralow voltage drive (1.8V drive). [SBD] • Short reverse recovery time. • Low forward voltage. Ordering number : ENN6899 Package Dimensions unit : mm 2171 [CPH5802] 2.9 0.05 0.4 0.95 0.15 0.4 12 3 4 5 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS --20 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID --2 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% --8 A Allowable Power Dissipation PD Mounted on a ceramic board (600mm2 ✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage VRRM 15 V Nonrepetitive Peak Reverse Surge Voltage VRSM 15 V Average Output Current IO 1A Surge Forward Current IFSM 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : QC CPH5802 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com Publication Order Number: CPH5802/D |
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