MJW16010A datasheet(6/12 Pages) ONSEMI

Part #	MJW16010A

Description	NPN Silicon Power Transistors

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MJW16010A

http://onsemi.com

6

+15

150 Ω 100 Ω

100 µF

MTP8P10

MPF930

MUR105

MJE210

150 Ω

500 µF

Voff

50 Ω

+10

MTP12N10

MTP8P10

RB1

RB2

A

1 µF

Drive Circuit

*Tektronix AM503

*P6302 or Equivalent

Scope — Tektronix

7403 or Equivalent

T1 [

Lcoil (ICpk)

VCC

Note: Adjust Voff to obtain desired VBE(off) at Point A.

T1 adjusted to obtain IC(pk)

T1

+V

-V

0 V

A

*IB

*IC

L

T.U.T

.

1N4246GP

Vclamp

VCC

IC(pk)

VCE(pk)

VCE

IB

IC

IB1

IB2

VCEO(sus)

L = 10 mH

RB2 = ∞

VCC = 20 Volts

IC(pk) = 100 mA

Inductive Switching

L = 200

µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

RBSOA

L = 200

µH

RB2 = 0

VCC = 20 Volts

RB1 selected for desired IB1

Table 1. Inductive Load Switching

Figure 12. Inductive Switching Measurements

Figure 13. Peak Reverse Base Current

VBE(off), REVERSE BASE VOLTAGE (VOLTS)

0

10

8

7

6

IB1 = 2 A

01

2

3

5

IC = 10 A

TC = 25°C

tfi

trv

t, TIME

IC

90% IB1

IC(pk)

VCE(pk)

90% VCE(pk)

90% IC(pk)

10% VCE(pk)

10%

IC(pk) 2% IC

IB

tsv

tti

tc

VCE

9

4

3

5

2

1

4

1 A

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