MMDF4C03HD datasheet(4/16 Pages) ONSEMI

Part #	MMDF4C03HD

Description	Complementary SO??, Dual Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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MMDF4C03HD

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TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus

Gate−To−Source Voltage

Figure 3. On−Resistance versus

Gate−To−Source Voltage

2.9 V

1.2

2.0

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

6.0

4.0

5.0

3.0

2.0

1.0

0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25_C

2.7 V

3.1 V

3.3 V

3.5 V

3.7 V

3.9 V

VGS = 10 V

4.1 V

4.5 V

6.0 V

4.3 V

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

4.0

2.0

1.0

0

2.0

2.5

3.0

3.5

4.0

3.0

5.0

6.0

VDS ≥ 10 V

TJ = −55_C

100

_C

25

_C

8.0

10

2.0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.8

0.4

0.3

0.2

0.1

0

9.0

3.0

4.0

5.0

6.0

7.0

0.5

TJ = 25_C

ID = 3 A

0.6

0.7

1.2

2.0

0

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

8.0

10

6.0

4.0

2.0

0

0.6

0.2

0.4

0.8

1.0

1.4

1.6

1.8

TJ = 25_C

2.7 V

2.9 V

3.1 V

3.3 V

3.5 V

VGS = 2.5 V

10 V

6.0 V

4.5 V

4.3 V

4.1 V

3.7 V

3.9 V

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

4.5

5.0

1.5

8.0

4.0

2.0

0

2.0

2.5

3.0

3.5

4.0

6.0

10

12

VDS ≥ 10 V

TJ = −55_C

100

_C

25

_C

8.0

10

2.0

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.30

0.20

0.15

0.10

0.05

0

9.0

3.0

4.0

5.0

6.0

7.0

0.25

TJ = 25_C

ID = 6 A

N−Channel

P−Channel

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