MMDF5N02Z

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6

t, TIME

di/dt = 300 A/

µs

Standard Cell Density

High Cell Density

SAFE OPERATING AREA

The Forward Biased Safe Operating Area curves de-

fine the maximum simultaneous drain−to−source vol-

tage and drain current that a transistor can handle safely

when it is forward biased. Curves are based upon maxi-

mum peak junction temperature and a case temperature

termined by using the thermal response data in conjunc-

tion with the procedures discussed in AN569, “Transient

Thermal Resistance − General Data and Its Use.”

Switching between the off−state and the on−state may

traverse any load line provided neither rated peak current

the total power averaged over a complete switching cycle

A power MOSFET designated E−FET can be safely

used in switching circuits with unclamped inductive

loads. For reliable operation, the stored energy from cir-

cuit inductance dissipated in the transistor while in ava-

lanche must be less than the rated limit and must be

adjusted for operating conditions differing from those

specified. Although industry practice is to rate in terms

of energy, avalanche energy capability is not a constant.

The energy rating decreases non−linearly with an in-

crease of peak current in avalanche and peak junction

temperature.

Figure 12. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

10

SINGLE PULSE

10

0.1

10 ms

1

100

100

1 ms

dc

THERMAL LIMIT

PACKAGE LIMIT