MTD4N20E datasheet(3/12 Pages) ONSEMI

Part #	MTD4N20E

Description	N?묬hannel DPAK Power MOSFET

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MTD4N20E

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TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

TJ, JUNCTION TEMPERATURE (°C)

ID, DRAIN CURRENT (AMPS)

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance versus Drain Current

and Temperature

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1

100

Figure 5. On−Resistance Variation with

Temperature

Figure 6. Drain−To−Source Leakage

Current versus Voltage

VDS ≥ 10 V

100°C

25°C

VGS = 10 V

−55°C

25°C

−50

−25

0

25

50

75

100

125

150

VGS = 0 V

TJ = 125°C

TJ = 100°C

TJ = 25°C

VGS = 10 V

ID = 4 A

10

VGS = 10 V

8 V

TJ = 25°C

100°C

15 V

8

6 V

7 V

9 V

TJ = −55°C

2.5

2.0

1.5

1.0

0.5

0

5 V

7

6

5

4

3

2

1

0

14

12

10

8

6

4

2

0

8

7

6

5

4

3

2

1

0

9

8

7

6

5

4

3

2

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

7

6

5

4

3

2

1

08

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0

7

6

5

4

3

2

1

08

VGS = 10 V

25°C

200

150

100

50

0

250

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MTD4N20E Datasheet(PDF) 3 Page - ON Semiconductor

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