© Semiconductor Components Industries, LLC, 2013

May, 2013 − Rev. 8

1

Publication Order Number:

MTD2955E/D

MTD2955E

Power Field Effect

Transistor DPAK for Surface

Mount

P−Channel Enhancement−Mode Silicon

Gate

This advanced MOSFET is designed to withstand high energy in the

avalanche and commutation modes. The new energy efficient design

also offers a drain−to−source diode with a fast recovery time.

Designed for low voltage, high speed switching applications in power

supplies, converters and PWM motor controls, these devices are

particularly well suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer additional

safety margin against unexpected voltage transients.

Fast Recovery Diode

2500 Unit Tape & Reel, Add T4 Suffix to Part Number

http://onsemi.com

Device

Package

Shipping†

ORDERING INFORMATION

MTD2955ET4

DPAK

2500/ Tape & Reel

DPAK

SUFFIX

CASE 369A

Style 2

MARKING

DIAGRAM

T2955E

= Specific Device Code

Y

= Year

WW

= Work Week

POWER FET

12 AMPERES

60 VOLTS

D

S

G

YWW

T2955E

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.