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MTDF1C02HDR2 Datasheet(PDF) 4 Page - ON Semiconductor |
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MTDF1C02HDR2 Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 14 page MTDF1C02HD http://onsemi.com 4 ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 2) Characteristic Symbol Polarity Min Typ Max Unit SWITCHING CHARACTERISTICS − continued (Note 4) Total Gate Charge (VDS = 16 Vdc, ID = 1.7 Adc, VGS = 4.5 Vdc) (Note 2) (VDS = 16 Vdc, ID = 1.2 Adc, VGS = 4.5 Vdc) (Note 2) QT (N) (P) − − 3.9 5.3 5.5 7.5 nC Gate−Source Charge Q1 (N) (P) − − 0.4 0.7 − − Gate−Drain Charge Q2 (N) (P) − − 1.7 2.6 − − Q3 (N) (P) − − 1.5 1.9 − − SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C) Forward Voltage (Note 3) (IS = 1.7 Adc, VGS = 0 Vdc) (Note 2) (IS = 1.2 Adc, VGS = 0 Vdc) VSD (N) (P) − − 0.84 0.89 1.0 1.1 Vdc Reverse Recovery Time (IF = IS, dIS/dt = 100 A/μs) (Note 2) trr (N) (P) − − 29 86 − − ns ta (N) (P) − − 14 27 − − tb (N) (P) − − 15 59 − − Reverse Recovery Stored Charge QRR (N) (P) − − 0.018 0.115 − − μC 2. Negative signs for P−Channel device omitted for clarity. 3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. |
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