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MTDF1C02HDR2 Datasheet(PDF) 4 Page - ON Semiconductor

Part # MTDF1C02HDR2
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTDF1C02HDR2 Datasheet(HTML) 4 Page - ON Semiconductor

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MTDF1C02HD
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4
ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS − continued (Note 4)
Total Gate Charge
(VDS = 16 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc) (Note 2)
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.5 Vdc) (Note 2)
QT
(N)
(P)
3.9
5.3
5.5
7.5
nC
Gate−Source Charge
Q1
(N)
(P)
0.4
0.7
Gate−Drain Charge
Q2
(N)
(P)
1.7
2.6
Q3
(N)
(P)
1.5
1.9
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 3)
(IS = 1.7 Adc, VGS = 0 Vdc)
(Note 2)
(IS = 1.2 Adc, VGS = 0 Vdc)
VSD
(N)
(P)
0.84
0.89
1.0
1.1
Vdc
Reverse Recovery Time
(IF = IS,
dIS/dt = 100 A/μs) (Note 2)
trr
(N)
(P)
29
86
ns
ta
(N)
(P)
14
27
tb
(N)
(P)
15
59
Reverse Recovery Stored
Charge
QRR
(N)
(P)
0.018
0.115
μC
2. Negative signs for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.


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