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MTP2955VG Datasheet(PDF) 1 Page - ON Semiconductor

Part # MTP2955VG
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MTP2955VG Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 7
1
Publication Order Number:
MTP2955V/D
MTP2955V
Preferred Device
Power MOSFET
12 Amps, 60 Volts
P−Channel TO−220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Features
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Pb−Free Package is Available*
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MW)
VDGR
60
Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 15
± 25
Vdc
Vpk
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
ID
ID
IDM
12
8.0
42
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
60
0.40
W
W/°C
Operating and Storage Temperature Range
TJ, Tstg −55 to 175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 12 Apk, L = 3.0 mH, RG = 25W)
EAS
216
mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
RqJC
RqJA
2.5
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
D
S
G
12 AMPERES, 60 VOLTS
RDS(on) = 230 mW
Device
Package
Shipping
ORDERING INFORMATION
MTP2955V
TO−220AB
50 Units/Rail
P−Channel
Preferred devices are recommended choices for future use
and best overall value.
MTP2955VG
TO−220AB
(Pb−Free)
50 Units/Rail
http://onsemi.com
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
MARKING DIAGRAM
AND PIN ASSIGNMENT
MTP2955V = Device Code
A
= Location Code
Y
= Year
WW
= Work Week
G
= Pb−Free Package
MTP2955VG
AYWW
1
Gate
3
Source
4
Drain
2
Drain


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