NCL30088DDR2G datasheet(6/26 Pages) ONSEMI

Part #	NCL30088DDR2G

Description	Power Factor Corrected Quasi-Resonant Primary Side Current-Mode Controller

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Manufacturer	ONSEMI [ON Semiconductor]

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NCL30088

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Table 4. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V, VZCD = 0 V,

VCS = 0 V, VSD = 1.5 V) For min/max values TJ = −40°C to +125°C, VCC = 12 V)

Description

Unit

Max

Typ

Min

Symbol

Test Condition

CURRENT SENSE

Propagation delay from current detection to gate

off−state

tILIM

−

100

150

ns

Maximum on−time

ton(MAX)

26

36

46

ms

Threshold for immediate fault protection activation

VCS(stop)

1.35

1.50

1.65

V

Leading Edge Blanking Duration for VCS(stop)

tBCS

−

150

−

ns

Current source for CS to GND short detection

ICS(short)

400

500

600

mA

Current sense threshold for CS to GND short de-

tection

VCS rising

VCS(low)

30

65

100

mV

GATE DRIVE

Drive Resistance

DRV Sink

DRV Source

RSNK

RSRC

−

13

30

−

W

Drive current capability

DRV Sink (Note 6)

DRV Source (Note 6)

ISNK

ISRC

−

500

300

−

mA

Rise Time (10% to 90%)

CDRV = 470 pF

tr

–

40

−

ns

Fall Time (90% to 10%)

CDRV = 470 pF

tf

–

30

−

ns

DRV Low Voltage

VCC = VCC(off)+0.2 V

CDRV = 470 pF, RDRV=33 kW

VDRV(low)

8

–

−

V

DRV High Voltage

VCC = VCC(MAX)

CDRV = 470 pF, RDRV=33 kW

VDRV(high)

10

12

14

V

ZERO VOLTAGE DETECTION CIRCUIT

Upper ZCD threshold voltage

VZCD rising

VZCD(rising)

−

90

150

mV

Lower ZCD threshold voltage

VZCD falling

VZCD(falling)

35

55

−

mV

ZCD hysteresis

VZCD(HYS)

15

−

mV

Propagation Delay from valley detection to DRV high

VZCD falling

TDEM

−

100

300

ns

Blanking delay after on−time

TZCD(blank1)

1.12

1.50

1.88

ms

Timeout after last DEMAG transition

TTIMO

5.0

6.5

8.0

ms

Pulling−down resistor

VZCD = VZCD(falling)

RZCD(PD)

−

200

−

k

W

CONSTANT CURRENT AND POWER FACTOR CONTROL

Reference Voltage at TJ = 25°C

A and B versions

C and D versions

VREF

245

195

250

200

255

205

mV

Reference Voltage TJ = 25°C to 100°C

A and B versions

C and D versions

VREF

242.5

192.5

250.0

200.0

257.5

207.5

mV

Reference Voltage TJ = −40°C to 125°C

A and B versions

C and D versions

VREF

240

190

250

200

260

210

mV

Current sense lower threshold

VCS falling

VCS(low)

20

55

100

mV

Vcontrol to current setpoint division ratio

Vratio

−

4

−

Error amplifier gain

VREFX=VREF

GEA

40

50

60

mS

Error amplifier current capability

VREFX=VREF

IEA

±60

mA

6. Guaranteed by Design

7. A NTC is generally placed between the SD and GND pins. Parameters RTF(start), RTF(stop), ROTP(off) and ROTP(on) give the resistance the

NTC must exhibit to respectively, enter thermal foldback, stop thermal foldback, trigger the OTP limit and allow the circuit recovery after

an OTP situation.

8. At startup, when VCC reaches VCC(on), the controller blanks OTP for more than 250 ms to avoid detecting an OTP fault by allowing the

SD pin voltage to reach its nominal value if a filtering capacitor is connected to the SD pin.

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