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NTMFS4C03NT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMFS4C03NT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTMFS4C03N http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 18.2 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25 °C 1 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.3 2.2 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 4.8 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 1.5 2.1 mW VGS = 4.5 V ID = 30 A 2.2 2.8 Forward Transconductance gFS VDS = 3 V, ID = 30 A 136 S Gate Resistance RG TA = 25 °C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V 3071 pF Output Capacitance COSS 1673 Reverse Transfer Capacitance CRSS 67 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A 20.8 nC Threshold Gate Charge QG(TH) 4.9 Gate−to−Source Charge QGS 8.5 Gate−to−Drain Charge QGD 4.7 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V, ID = 30 A 45.2 nC SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 14 ns Rise Time tr 32 Turn−Off Delay Time td(OFF) 27 Fall Time tf 17 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.75 1.1 V TJ = 125°C 0.6 Reverse Recovery Time tRR VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 47 ns Charge Time ta 23 Discharge Time tb 24 Reverse Recovery Charge QRR 39 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. |
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