NTMFS4C03NT3G datasheet(2/6 Pages) ONSEMI

Part #	NTMFS4C03NT3G

Description	Power MOSFET Dual N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

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NTMFS4C03N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

TJ

18.2

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 24 V

TJ = 25 °C

1

mA

TJ = 125°C

10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = 20 V

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.3

2.2

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

4.8

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 30 A

1.5

2.1

mW

VGS = 4.5 V

ID = 30 A

2.2

2.8

Forward Transconductance

gFS

VDS = 3 V, ID = 30 A

136

S

Gate Resistance

RG

TA = 25 °C

1.0

W

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 15 V

3071

pF

Output Capacitance

COSS

1673

Reverse Transfer Capacitance

CRSS

67

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 15 V; ID = 30 A

20.8

nC

Threshold Gate Charge

QG(TH)

4.9

Gate−to−Source Charge

QGS

8.5

Gate−to−Drain Charge

QGD

4.7

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 15 V,

ID = 30 A

45.2

nC

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDS = 15 V, ID = 15 A,

RG = 3.0 W

14

ns

Rise Time

tr

32

Turn−Off Delay Time

td(OFF)

27

Fall Time

tf

17

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 10 A

TJ = 25°C

0.75

1.1

V

TJ = 125°C

0.6

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

47

ns

Charge Time

ta

23

Discharge Time

tb

24

Reverse Recovery Charge

QRR

39

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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