NTMFS5C410NLT datasheet(4/6 Pages) ONSEMI

Part #	NTMFS5C410NLT

Description	Power MOSFET 4 Amps, 20 Volts

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NTMFS5C410NLT

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

40

30

20

10

0

1k

3k

4k

2k

10k

100

80

40

20

0

2

4

6

8

10

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

100

10

1

10

100

10,00

0.9

0.8

1.0

0.7

0.6

0.5

0.4

0.3

1

21

41

Figure 11. Safe Operating Area

Figure 12. IPEAK vs. Time in Avalanche

VDS (V)

TIME IN AVALANCHE (s)

100

10

1

0.1

1

10

100

1000

1

10

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

0

10

15

20

25

30

5

VDS = 20 V

TJ = 25°C

ID = 50 A

QT

QGS

QGD

VGS = 4.5 V

VDD = 20 V

ID = 50 A

td(off)

td(on)

tf

tr

TJ = 150°C

TJ = 25°C

TJ = −55°C

11

31

TJ(initial) = 100°C

TJ(initial) = 25°C

1E−04

1E−02

RDS(on) Limit

Thermal Limit

Package Limit

dc

0.01 ms

0.1 ms

1 ms

10 ms

TC = 25°C

VGS ≤ 10 V

5k

6k

7k

8k

11k

1E−03

1000

35

25

15

5

9k

60

120

TJ = 125°C

6

16

26

36

46

100

140

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