NTMFS4957N datasheet(1/7 Pages) ONSEMI

Part #	NTMFS4957N

Description	Power MOSFET Dual N?묬hannel

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Manufacturer	ONSEMI [ON Semiconductor]

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January, 2014 − Rev. 1

1

Publication Order Number:

NTMFS4957N/D

NTMFS4957N

Power MOSFET

30 V, 70 A, Single N−Channel, SO−8 FL

Features

• Optimized for Portable Applications with 5 V Gate Drive

• Low RDS(on) to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Applications

• CPU Power Delivery

• DC−DC Converters

• Notebook Battery Management

MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

30

V

Gate−to−Source Voltage

VGS

±20

V

Continuous Drain

Current RqJA

(Note 1)

Steady

State

TA = 25°C

ID

17.1

A

TA = 100°C

10.9

Power Dissipation

RqJA (Note 1)

TA = 25°C

PD

2.6

W

Continuous Drain

Current RqJA ≤ 10 s

(Note 1)

TA = 25°C

ID

30

A

TA = 100°C

19

Power Dissipation

RqJA ≤ 10 s (Note 1)

TA = 25°C

PD

8.1

W

Continuous Drain

Current RqJA

(Note 2)

TA = 25°C

ID

10.2

A

TA = 100°C

6.5

Power Dissipation

RqJA (Note 2)

TA = 25°C

PD

0.92

W

Continuous Drain

Current RqJC

(Note 1)

TC = 25°C

ID

70

A

TC = 85°C

44

Power Dissipation

RqJC (Note 1)

TC = 25°C

PD

43

W

Pulsed Drain

Current

TA = 25°C, tp = 10 ms

IDM

210

A

Current Limited by Package

TA = 25°C

IDmax

100

A

Operating Junction and Storage

Temperature

TJ,

TSTG

−55 to

+150

°C

Source Current (Body Diode)

IS

40

A

Drain to Source DV/DT

dV/dt

6.5

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,

IL = 37 Apk, L = 0.1 mH, RG = 25 W)

EAS

68.5

mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

TL

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING

DIAGRAM

http://onsemi.com

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

4957N

AYWZZ

1

V(BR)DSS

RDS(ON) MAX

ID MAX

30 V

4.0 mW @ 10 V

70 A

6.0 mW @ 4.5 V

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5,6)

Device

Package

Shipping†

ORDERING INFORMATION

NTMFS4957NT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

NTMFS4957NT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

S

G

D

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