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NVMFS5C612NLWFT3G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NVMFS5C612NLWFT3G
Description  Power MOSFET 4 Amps, 20 Volts
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NVMFS5C612NLWFT3G Datasheet(HTML) 2 Page - ON Semiconductor

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NVMFS5C612NL
www.onsemi.com
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
12.7
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25 °C
1.0
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±16 V
±100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.2
2.0
V
Threshold Temperature Coefficient
VGS(TH)/TJ
−5.76
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
1.2
1.5
m
W
VGS = 4.5 V
ID = 50 A
1.65
2.3
Forward Transconductance
gFS
VDS = 15 V, ID = 50 A
151
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
6660
pF
Output Capacitance
COSS
2953
Reverse Transfer Capacitance
CRSS
45
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
41
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
91
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
5
Gate−to−Source Charge
QGS
17.1
Gate−to−Drain Charge
QGD
10.9
Plateau Voltage
VGP
2.9
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 1.0 W
19
ns
Rise Time
tr
51
Turn−Off Delay Time
td(OFF)
47
Fall Time
tf
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.78
1.2
V
TJ = 125°C
0.66
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
78
ns
Charge Time
ta
36
Discharge Time
tb
42
Reverse Recovery Charge
QRR
105
nC
4. Pulse Test: pulse width
v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.


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