NTMFS4825NFET3G datasheet(5/6 Pages) ONSEMI

Part #	NTMFS4825NFET3G

Description	Single N?묬hannel Power MOSFET

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NTMFS4825NFE

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TYPICAL PERFORMANCE CURVES

VGS = 20 V

Single Pulse

TC = 25°C

08

16

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

6000

0

4

TJ = 25°C

Coss

Crss

Ciss

Figure 8. Gate−to−Source and Drain−to−Source

Voltage vs. Total Charge

0

4

0

QG, TOTAL GATE CHARGE (nC)

2

8

40

ID = 30 A

TJ = 25°C

VDD = 15 V

QT

50

0

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time

Variation vs. Gate Resistance

RG, GATE RESISTANCE (W)

1

10

100

1000

VGS = 0 V

Figure 10. Diode Forward Voltage vs. Current

100

0.2

0.4

5

10

15

1

0.6

0.8

20

30

25

TJ = 25°C

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1000

10

20

1

100

0

25

TJ, STARTING JUNCTION TEMPERATURE (°C)

ID = 50 A

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

50

75

50

200

300

100

125

350

150

1000

100

28

8000

5000

4000

3000

2000

0.1

6

20

10

30

80

70

60

Qgs

7000

VGS = 0 V

11

Qgd

0.01

0.1

150

250

400

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10 ms

100 ms

1 ms

10 ms

dc

0.3

0.5

0.7

10

VDD = 15 V

ID = 15 A

VGS = 10 V

td(off)

td(on)

tf

tr

1

10

3

5

7

9

12

24

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NTMFS4825NFET3G Datasheet(PDF) 5 Page - ON Semiconductor

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