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ECH8660 Datasheet(PDF) 2 Page - ON Semiconductor |
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ECH8660 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 8 page  Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max [N-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V Forward Transfer Admittance | yfs | VDS=10V, ID=2A 1 1.66 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=2A, VGS=10V 45 59 mΩ RDS(on)2 ID=1A, VGS=4.5V 85 119 mΩ RDS(on)3 ID=1A, VGS=4V 110 155 mΩ Input Capacitance Ciss VDS=10V, f=1MHz 240 pF Output Capacitance Coss VDS=10V, f=1MHz 45 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 30 pF Turn-ON Delay Time td(on) See specified Test Circuit. 6.2 ns Rise Time tr See specified Test Circuit. 11 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 17 ns Fall Time tf See specified Test Circuit. 7.5 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=4.5A 4.4 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=4.5A 1.1 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=4.5A 0.64 nC Diode Forward Voltage VSD IS=4.5A, VGS=0V 0.84 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V --30 V Zero-Gate Voltage Drain Current IDSS VDS=--30V, VGS=0V --1 μA Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.3 V Forward Transfer Admittance | yfs | VDS=--10V, ID=--2A 2.5 4.2 S Static Drain-to-Source On-State Resistance RDS(on)1 ID=--2A, VGS=--10V 45 59 mΩ RDS(on)2 ID=--1A, VGS=--4.5V 71 100 mΩ RDS(on)3 ID=--1A, VGS=--4V 82 115 mΩ Input Capacitance Ciss VDS=--10V, f=1MHz 430 pF Output Capacitance Coss VDS=--10V, f=1MHz 105 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 75 pF Turn-ON Delay Time td(on) See specified Test Circuit. 7.5 ns Rise Time tr See specified Test Circuit. 26 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 45 ns Fall Time tf See specified Test Circuit. 35 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4.5A 10 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4.5A 2.0 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4.5A 2.5 nC Diode Forward Voltage VSD IS=--4.5A, VGS=0V --0.85 --1.2 V Switching Time Test Circuit [N-channel] [P-channel] PW=10μs D.C.≤1% P.G 50Ω G S D ID=2A RL=7.5Ω VDD=15V VOUT VIN 10V 0V VIN ECH8660 PW=10μs D.C.≤1% P.G 50Ω G S D ID= --2A RL=7.5Ω VDD= --15V VOUT VIN 0V --10V VIN ECH8660 ECH8660 No. A1358-2/8 |
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Similar Description - ECH8660 |
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