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MCH3333A-TL-W Datasheet(PDF) 1 Page - ON Semiconductor |
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MCH3333A-TL-W Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 5 page 1 Publication Order Number : MCH3333A/D © Semiconductor Components Industries, LLC, 2015 June 2015 - Rev. 1 www.onsemi.com MCH3333A This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 1.8V drive • ESD Diode-Protected Gate • Pb-Free, Halogen Free and RoHS compliance Typical Applications • Load Switch SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25 °C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage VDSS −30 V Gate to Source Voltage VGSS ±10 V Drain Current (DC) ID −2.0 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP −8.0 A Power Dissipation When mounted on ceramic substrate (1000mm 2 × 0.8mm) PD 0.9 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Ambient RθJA 138.8 °C/W When mounted on ceramic substrate (1000mm 2 × 0.8mm) Power MOSFET –30V, 215mΩ, –2.0A, Single P-Channel VDSS RDS(on) Max ID Max −30V 215mΩ@ −4V −2A 280mΩ@ −2.5V 430mΩ@ −1.8V ELECTRICAL CONNECTION P-Channel PACKING TYPE : TL MARKING ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. 1 2 3 1: Gate 2: Source 3: Drain TL QU |
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