1

Publication Order Number :

MCH6421/D

© Semiconductor Components Industries, LLC, 2015

July 2015 - Rev. 2

www.onsemi.com

MCH6421

This Power MOSFET is produced using ON Semiconductor’s trench

technology, which is specifically designed to minimize gate charge and low

on resistance. This device is suitable for applications with low gate charge

driving or low on resistance requirements.

Features

• Low On-Resistance

• 1.8V drive

• High Speed Switching

• ESD Diode-Protected Gate

• Pb-Free and RoHS compliance

• Halogen Free compliance : MCH6421-TL-W

Typical Applications

• Load Switch

• Synchronous Boost Converter

SPECIFICATIONS

ABSOLUTE MAXIMUM RATING at Ta = 25

Parameter

Symbol

Value

Unit

Drain to Source Voltage

VDSS

20

V

Gate to Source Voltage

VGSS

±12

V

Drain Current (DC)

ID

5.5

A

Drain Current (Pulse)

PW

≤ 10μs, duty cycle ≤ 1%

IDP

22

A

Power Dissipation

When mounted on ceramic substrate

(1200mm

PD

1.5

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction to Ambient

RθJA

83.3

°C/W

When mounted on ceramic substrate

(1200mm

Power MOSFET

20V, 38mΩ, 5.5A, Single N-Channel

VDSS

RDS(on) Max

ID Max

20V

38mΩ@ 4.5V

5.5A

61mΩ@ 2.5V

99mΩ@ 1.8V

ELECTRICAL CONNECTION

N-Channel

PACKING TYPE : TL

MARKING

ORDERING INFORMATION

See detailed ordering and shipping

information on page 5 of this data sheet.

TL

3

4

1, 2, 5, 6

1: Drain

2: Drain

3: Gate

4: Source

5: Drain

6: Drain

KV