MCH6660 datasheet(5/8 Pages) ONSEMI

Part #	MCH6660

Description	Complementary Dual Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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MCH6660

www.onsemi.com

5

[Pch]

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

°C

RDS(on) -- Ta

RDS(on) -- VGS

IS -- VSD

Forward Diode Voltage, VSD -- V

Ciss, Coss, Crss -- VDS

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- A

gFS -- ID

SW Time -- ID

Drain Current, ID -- A

S O A

Drain-to-Source Voltage, VDS -- V

0--20

--4--10

--8

--6--14

--18

--12

--16

--2

10

2

IT14621

HD14619

--1.2

--1.0

--0.6

--0.4

--0.8

--0.2

0

--0.01

5

7

3

2

5

7

3

2

5

3

2

--0.1

--1.0

--0.1

--1.0

23

57

23

3

5

7

100

7

2

VGS=0V

Ciss

Crss

HD141104

10

2

3

5

7

2

3

5

td(off)

VDD= --10V

VGS= --4.5V

tr

tf

Coss

td(on)

f=1MHz

HD14618

--0.01

--0.1

--1.0

3

5

7

2

3

1.0

0.1

7

5

2

23

52

3

7

23

57

Ta

= -

-25

°C

25°

C

75°

C

VDS= --10V

Total Gate Charge, Qg -- nC

VGS -- Qg

IT14622

0

0.2

0.4

1.0

0.8

1.8

1.4

1.6

1.2

0.6

2.0

0

--1.0

--2.0

--3.0

--0.5

--1.5

--2.5

--4.0

--3.5

--4.5

VDS= --10V

ID= --1.5A

[Pch]

IT16649

--60--40 --20

160

020406080

100 120 140

IT16648

0--1

--3--5

--8--10

--2--4

--7

--6

--9

100

0

200

700

400

300

500

600

100

0

200

700

400

300

500

600

VGS=

--4.5V,

ID= --0.75A

VGS=

--2.5V

, ID=

--0.3A

VGS

= --1.8V

, ID=

--0.1A

Ta=25

°C

ID= --0.1A

--0.3A

--0.75A

HD16650

--0.01

--0.1

--1.0

2

3

5

7

2

3

5

7

2

3

5

7

--10

--0.1

--1.0

IDP= --6A (PW≤10μs)

ID= --1.5A

100μ

s

1m

s

10m

s

10

0m

s

DC

operatio

n

Operation in

this area is

limited by RDS(on).

--10

23

57

23

57

23

57--100

Ta=25

°C

Single pulse

When mounted on ceramic substrate (900mm2

×0.8mm) 1unit

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