MCH6660 datasheet(4/8 Pages) ONSEMI

Part #	MCH6660

Description	Complementary Dual Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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MCH6660

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4

[Nch]

[Pch]

IS -- VSD

Forward Diode Voltage, VSD -- V

Drain Current, ID -- A

gFS -- ID

Drain Current, ID -- A

Total Gate Charge, Qg -- nC

VGS -- Qg

Ciss, Coss, Crss -- VDS

Drain-to-Source Voltage, VDS -- V

S O A

Drain-to-Source Voltage, VDS -- V

0

0.4

0.2

0.6

1.2

1.0

0.8

0.001

0.01

7

5

3

2

0.1

10

7

1.0

7

5

3

2

5

3

7

2

5

3

IT16376

IT16377

Ta=

--25

°C

75°

C

25°

C

VDS=10V

VGS=0V

0.1

2

1.0

10

7

5

7

5

3

0.1

2

0.01

57

23

1.0

2

57

10

57

33

020

48

12

16

6101418

2

IT16379

10

7

100

1000

5

3

2

7

5

3

2

Crss

Coss

Ciss

0

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.5

4.0

IT16380

VDS=10V

ID=2A

f=1MHz

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

ID -- VDS

IT14614

--0.1 --0.2

--0.6

--0.4

--0.3

--0.7 --0.8

--1.0

--0.9

--0.5

0

--0.2

--2.0

--1.4

--1.8

--1.6

--1.2

--1.0

--0.8

--0.6

--0.4

0

--0.2

--2.0

--1.4

--1.8

--1.6

--1.2

--1.0

--0.8

--0.6

--0.4

IT14615

--1.0

--0.5

--2.0

--1.5

--3.0

--2.5

0

VGS= --1.0V

VDS= --10V

--1.5V

[Nch]

IT16647

2

3

5

7

2

3

5

7

0.1

10

2

3

5

7

1.0

0.01

2

23

57 1.0

2

35 75 7

10

100

0.1

Operation in this

area is limited by RDS(on).

100m

s

100μ

s

10m

s

DC

operation

1m

s

3

IDP=8A (PW≤10μs)

ID=2A

Ta=25

°C

Single pulse

When mounted on ceramic substrate (900mm2

×0.8mm) 1unit

SW Time -- ID

10

1.0

1000

7

5

3

2

100

7

5

3

2

7

5

3

2

0.01

0.1

2

1.0

35 7

IT16644

VDD=10V

VGS=4.5V

td(off)

tr

tf

10

23

57

23

57

td(on)

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