MTB30N06VL datasheet(6/10 Pages) ONSEMI

Part #	MTB30N06VL

Description	N?묬hannel Power MOSFET

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MTB30N06VL

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6

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

TA, AMBIENT TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Figure 13. Thermal Response

0.1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 14. Diode Reverse Recovery Waveform

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1

Figure 15. D2PAK Power Derating Curve

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

10

100

1000

1

dc

100 μs

1 ms

10 ms

10 μs

t, TIME (s)

1.00

0.10

0.01

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

0.02

TJ, STARTING JUNCTION TEMPERATURE (°C)

25

50

75

100

125

ID = 30 A

150

0

60

40

20

140

80

100

120

175

0

0.5

1

1.5

2.0

2.5

3

25

50

75

100

125

150

RθJA = 50°C/W

Board material = 0.065 mil FR−4

Mounted on the minimum recommended footprint

Collector/Drain Pad Size ≈ 450 mils x 350 mils

175

160

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MTB30N06VL Datasheet(PDF) 6 Page - ON Semiconductor

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