MTB40N10ET4 datasheet(6/10 Pages) ONSEMI

Part #	MTB40N10ET4

Description	N?묬hannel Power MOSFET

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MTB40N10E

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6

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Figure 13. Thermal Response

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

0

0.5

1

1.5

2.0

2.5

3

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (°C)

Figure 15. D2PAK Power Derating Curve

RθJA = 50°C/W

Board material = 0.065 mil FR−4

Mounted on the minimum recommended footprint

Collector/Drain Pad Size ≈ 450 mils x 350 mils

100 ms

TJ, STARTING JUNCTION TEMPERATURE (°C)

0.1

1.0

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

25

50

75

100

125

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

ID = 40 A

100

150

t, TIME (seconds)

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

1000

1.0

0

800

600

500

400

700

100

10

300

200

100

0.01

0.1

1.0

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

1.0 ms

10 ms

dc

10 ms

D = 0.5

0.2

0.1

SINGLE PULSE

0.05

0.02

0.0

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