MTB50N06VL datasheet(6/10 Pages) ONSEMI

Part #	MTB50N06VL

Description	N?묬hannel Power MOSFET

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MTB50N06VL

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SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

Figure 13. Thermal Response

Figure 14. Diode Reverse Recovery Waveform

Figure 15. D2PAK Power Derating Curve

RθJC(t) = r(t) RθJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

t, TIME (s)

1.00

0.10

0.01

0.2

D = 0.5

0.05

0.01

SINGLE PULSE

0.1

1.0E−05

1.0E−04

1.0E−03

1.0E−02

1.0E−01

1.0E+00

1.0E+01

0.02

TJ, STARTING JUNCTION TEMPERATURE (°C)

0.1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

25

50

75

100

125

10

VGS = 20 V

SINGLE PULSE

TC = 25°C

ID = 42 A

1

150

10

100

1000

1

0

150

100

50

dc

100 μs

1 ms

10 ms

10 μs

200

250

300

175

0

0.5

1

1.5

2.0

2.5

3

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (°C)

RθJA = 50°C/W

Board material = 0.065 mil FR−4

Mounted on the minimum recommended footprint

Collector/Drain Pad Size ≈ 450 mils x 350 mils

175

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