© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 3

1

Publication Order Number:

MTB55N06Z/D

MTB55N06Z

Preferred Device

Power MOSFET

55 Amps, 60 Volts

This Power MOSFET is designed to withstand high energy in the

avalanche mode and switch efficiently. This high energy device also

offers a drain−to−source diode with fast recovery time. Designed for

high voltage, high speed switching applications in power supplies,

PWM motor controls and other inductive loads, the avalanche energy

capability is specified to eliminate the guesswork in designs where

inductive loads are switched and offer additional safety margin against

unexpected voltage transients.

Discrete Fast Recovery Diode

Transient Suppressor−Absorbs High Energy in the Avalanche Mode

Machine Model and 4000 V Human Body Model.

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

60

Vdc

60

Vdc

Gate−to−Source Voltage

− Continuous

± 20

± 40

Vdc

Vpk

Drain Current

55

35.5

165

Adc

Apk

Derate above 25°C

(Note 1.)

113

0.91

2.5

Watts

W/°C

Operating and Storage Temperature

Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

454

mJ

Thermal Resistance

− Junction to Case

− Junction to Ambient

− Junction to Ambient (Note 1.)

1.1

62.5

50

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

260

°C

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

MARKING DIAGRAM

& PIN ASSIGNMENT

MTB55N06Z

YWW

1

Gate

4

Drain

2

Drain

3

Source

55 AMPERES

60 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

MTB55N06Z

50 Units/Rail

CASE 418B

STYLE 2

1

2

3

4

http://onsemi.com

N−Channel

D

S

G

MTB55N06Z

= Device Code

Y

= Year

WW

= Work Week

MTB55N06ZT4

800/Tape & Reel

Preferred devices are recommended choices for future use

and best overall value.