NTMFS4C35N

http://onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

3.8

°C/W

Junction−to−Ambient – Steady State (Note 4)

48.3

Junction−to−Ambient – Steady State (Note 5)

159.3

Junction−to−Ambient – (t ≤ 10 s) (Note 4)

18.8

4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

5. Surface−mounted on FR4 board using the minimum recommended pad size.

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

(transient)

34

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

12

mV/°C

Zero Gate Voltage Drain Current

1.0

mA

10

Gate−to−Source Leakage Current

±100

nA

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

1.3

2.2

V

Negative Threshold Temperature Coefficient

5.0

mV/°C

Drain−to−Source On Resistance

2.56

3.2

mW

3.4

4.0

Forward Transconductance

50

S

Gate Resistance

1.0

W

CHARGES AND CAPACITANCES

Input Capacitance

2300

pF

Output Capacitance

1097

Reverse Transfer Capacitance

46

Capacitance Ratio

0.02

Total Gate Charge

15

nC

Threshold Gate Charge

3.3

Gate−to−Source Charge

6.5

Gate−to−Drain Charge

5.5

Gate Plateau Voltage

3.1

V

Total Gate Charge

32.5

nC

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

12.6

ns

Rise Time

33

Turn−Off Delay Time

21.4

Fall Time

6.7

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.