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NTMFS4C35NT3G Datasheet(PDF) 2 Page - ON Semiconductor |
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NTMFS4C35NT3G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NTMFS4C35N http://onsemi.com 2 THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 3.8 °C/W Junction−to−Ambient – Steady State (Note 4) RqJA 48.3 Junction−to−Ambient – Steady State (Note 5) RqJA 159.3 Junction−to−Ambient – (t ≤ 10 s) (Note 4) RqJA 18.8 4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 5. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain−to−Source Breakdown Voltage (transient) V(BR)DSSt VGS = 0 V, ID(aval) = 13.2 A, Tcase = 25°C, ttransient = 100 ns 34 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ 12 mV/°C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 24 V TJ = 25°C 1.0 mA TJ = 125°C 10 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.3 2.2 V Negative Threshold Temperature Coefficient VGS(TH)/TJ 5.0 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 30 A 2.56 3.2 mW VGS = 4.5 V ID = 30 A 3.4 4.0 Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 50 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 15 V 2300 pF Output Capacitance COSS 1097 Reverse Transfer Capacitance CRSS 46 Capacitance Ratio CRSS/CISS VGS = 0 V, VDS = 15 V, f = 1 MHz 0.02 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 15 V; ID = 30 A 15 nC Threshold Gate Charge QG(TH) 3.3 Gate−to−Source Charge QGS 6.5 Gate−to−Drain Charge QGD 5.5 Gate Plateau Voltage VGP 3.1 V Total Gate Charge QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 32.5 nC SWITCHING CHARACTERISTICS (Note 7) Turn−On Delay Time td(ON) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 12.6 ns Rise Time tr 33 Turn−Off Delay Time td(OFF) 21.4 Fall Time tf 6.7 6. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 7. Switching characteristics are independent of operating junction temperatures. |
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