NTMS4700NR2 datasheet(3/5 Pages) ONSEMI

Part #	NTMS4700NR2

Description	Single N?묬hannel Power MOSFET

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NTMS4700N

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TYPICAL PERFORMANCE CURVES

TJ = 125°C

0

16

0.6

0.2

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

4

0

Figure 1. On−Region Characteristics

03

20

12

4

5

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.002

0.006

0

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

−50

0

−25

25

1

0.5

0

50

150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.012

610

TJ = −55°C

TJ = 125°C

75

TJ = 25°C

ID = 13 A

VGS = 10 V

0.4

TJ = 25°C

1.5

VGS = 10 V

222

100

25

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

15

VGS = 0 V

TJ = 150°C

TJ = 125°C

VGS = 4.5 V

1000

10000

1000000

3 V

VDS ≥ 10 V

0.010

20

2.8 V

8

2.4 V

8

14

18

30

24

20

VGS = 10 V

16

0.008

125

100

0

0.8

10

5

0.5

0.1

0.3

0.7

24

2

0.004

26

VGS = 10 V

TJ = 25°C

TJ = −55°C

0.002

0.006

0

ID, DRAIN CURRENT (AMPS)

0.012

610

222

0.010

14

18

0.008

0.004

26

2

100000

5 V

4 V

3.4 V

4

1

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