NTR4518NT1G datasheet(3/6 Pages) ONSEMI

Part #	NTR4518NT1G

Description	Single N?묬hannel Power MOSFET

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NTR4518N

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Units

Max

Typ

Min

Test Conditions

Symbol

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V, IS = 2.0 A

0.85

1.2

V

Reverse Recovery Time

tRR

VGS = 0 V, IS = 2.0 A,

dIS/dt = 100 A/ms

9.2

ns

Reverse Recovery Charge

QRR

4.0

nC

4. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.

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